Imaging Contrast with Multiple Ion Beams

A commercial Ga-FIB/SEM system can directly image samples using an ion beam or e-beam before, after or during milling/depositing process. This capability provides important feedback for process control. Because of the limited spatial resolution and Ga contamination of the Ga ion beam, the e-beam is often considered as the primary imaging tool. But ion beam imaging also provides important information about the samples. Orion Nanofab integrates He, Ne and Ga focused ion beams on one single platform. He and Ne ion beams are based on the gas field ion source (GFIS) technology. The images generated by He/Ne ion beams are sub-nm in resolution capturing intricate details of the samples[1]. Nanofab also provides an optional state of art Ga-FIB. With this unique configuration, Orion Nanofab provides a great platform to study ion beam imaging with a variety of ion species.