P-9: High Performance Back Channel Etch Metal Oxide Thin-film Transistor with Double Active Layers

Jong-Heon Yang,Ji Hun Choi,Jae-Eun Pi,Hee-Ok Kim,Eun-Suk Park,Oh-Sang Kwon,Sooji Nam,Sung Haeng Cho,Seunghyup Yoo,Chi-Sun Hwang

SID Symposium Digest of Technical Papers（2016）

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摘要

We fabricated high performance back channel etch (BCE) IZO/AIZTO double-layer channel oxide thin-film transistors (TFTs) and analyzed their electrical characteristics and photostability of the devices. The field-effect mobility of 53.2 cm2/Vs was obtained, and we expect IZO/AIZTO double-layer BCE TFT can be used as a backplane devices for next generation high performance display applications.

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关键词

thin-film thin-film,double active layers,oxide

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