P-9: High Performance Back Channel Etch Metal Oxide Thin-film Transistor with Double Active Layers
SID Symposium Digest of Technical Papers(2016)
摘要
We fabricated high performance back channel etch (BCE) IZO/AIZTO double-layer channel oxide thin-film transistors (TFTs) and analyzed their electrical characteristics and photostability of the devices. The field-effect mobility of 53.2 cm2/Vs was obtained, and we expect IZO/AIZTO double-layer BCE TFT can be used as a backplane devices for next generation high performance display applications.
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关键词
thin-film thin-film,double active layers,oxide
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