XRD Investigation of the Crystalline Quality of Sn Doped β-Ga2O3 Films Deposited by the RF Magnetron Sputtering Method
Materials Science Forum(2012)
Abstract
For the purpose of increasing the conductivity of β-Ga2O3 films, Sn doping in the β-Ga2O3 films has been explored using co-sputtering. Growth of β-Ga2O3 was confirmed by the XRD pattern for the undoped sample. However, it is shown that the Ga2O3 phase is transformed from the β to the γ phase by Sn doping, because of the increase of the phase transition temperature from the γ to the β phase. To improve the crystalline quality, additional annealing at 900°C for 60 min is performed to the Sn doped film. The XRD peaks corresponding with β-Ga2O3 could be confirmed after the additional annealing.
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Key words
crystalline quality,rf magnetron sputtering,rf magnetron sputtering method,doped
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