Monitoring of Silicon Nano-Crystal Dots Formation on SiO₂ and on Si₃N₄ in an UHV-CVD System

AbstractApplicability of SPA (Surface Photo Absorption) as an in-situ monitor of Si nanocrystal formation was comparatively studied to a monitoring with pyrometer.Although both SPA and pyrometer provide a signature of the Si nanocrystals nucleation and growth process as a function of irradiation time, SPA was found to be more sensitive to detect formation of desired nanocrystals on both SiO2 and Si3N4 surfaces. By using SPA as an in-situ monitor of nanocrystal formation, good repeatability of both nanocrystals' density and size was obtained on SiO2 and Si3N4 surfaces.