Advanced photomask repair technology for 65-nm lithography

Fumio Aramaki,Tomokazu Kozakai,Yasuhiko Sugiyama,Masashi Muramatsu,Yoshihiro Koyama,Osamu Matsuda,Katsumi Suzuki,Mamoru Okabe,Ryoji Hagiwara,Anto Yasaka,Tatsuya Adachi,Yoshiyuki Tanaka,Osamu Suga,Naoki Nishida,Youichi Usui

SPIE ProceedingsPhotomask and Next-Generation Lithography Mask Technology XIII（2006）

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摘要

Repair technology for 65nm generation photomasks requires more accurate shape and transmittance. The objective of this study is to evaluate FIB repair process with low acceleration voltage. The evaluation items were imaging impact, defect visibility, repaired shape, through focus behavior, repeatability of edge placement and controllability of repair size. In conclusion, we confirmed that FIB repair process with low acceleration voltage is applicable to 65nm generation photomasks.

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