Extremely high electron mobility in Si/GexSi1−xstructures grown by molecular beam epitaxyY. J. Mii,Y. H. Xie,E. A. Fitzgerald,Don Monroe, F. A. Thiel,B. E. Weir,L. C. FeldmanApplied Physics Letters(1991)引用 276|浏览0暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要