Improved Measurement Accuracy for Junction-to-Case Thermal Resistance of GaN HEMT Packages by Gate-to-Gate Electrical Resistance and Stacking Thermal Interface Materials

Accurate measurements of the junction-to-case thermal resistances of power devices or module packages are necessary for validating the thermal design of the package as well as of the entire converter system. Although accurate measurements can be obtained for Si and SiC packages by the JESD51-14 standard, no standard has been established for gallium nitride (GaN) packages. A main reason for this sh...