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Physics Based Compact Model for Drain Current in Fin-Shaped GaN MIS-HEMTs

M. P. M. Sruthi,Ajay Shanbhag,Deleep. R. R. Nair,Anjan Chakravorty,Muhammad Ashraful Alam,Nandita Dasgupta,Amitava Dasgupta

IEEE TRANSACTIONS ON ELECTRON DEVICES（2023）

Cited 3|Views9
Key words
2-D electron gas (2-DEG),charge-based model,compact model,drain current,fin-shaped GaN HEMT,side gates
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