Pt/Al 2 O 3 /TaO X /Ta Self-Rectifying Memristor With Record-Low Operation Current (<2 pA), Low Power (fJ), and High Scalability

IEEE Transactions on Electron Devices(2022)

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摘要
Self-rectifying memristor (SRM) with high rectification ratio (RR) and nonlinearity (NL) is a superior candidate for 3-D integrated array by effectively tackling the sneak path problem. In this article, we fabricated bilayer Pt/Al2O3/TaO $_{\!{X}}$ /Ta SRMs with a 250-nm feature size, which show record-low...
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关键词
Resistance,Switches,Scalability,Memristors,Power demand,Performance evaluation,Sputtering
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