High Q, Compact Photonic Crystal Nanobeam Cavity for an Active Device Platform in a CMOS Silicon Photonics Process

2021 IEEE 17th International Conference on Group IV Photonics (GFP)（2021）

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摘要

We demonstrate a high Q, compact photonic crystal nanobeam cavity in the new 45 nm GlobalFoundries 45CLO monolithic electronics-photonics platform optimized for silicon photonics - with an intrinsic Q of 134,000, FSR of 24.17 nm, and a theoretical Q/V of 2.2×10⁵(λ/n)^-3.

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