A Tight-Binding Model for Gallium Oxide: The Newest Ultra Wide-Bandgap Semiconductor

2020 IEEE MIT Undergraduate Research Technology Conference (URTC)(2020)

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摘要
Ga2O3, a novel ultra wide-bandgap semiconductor, shows promise for future-generation energy-efficient electronic devices. Ga2O3 presents new challenges when compared with conventional semiconductors due to the presence of polymorphs - structural phases with differing electronic and photonic properties. While modern ab initio electronic structure techniqu...
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关键词
Gallium,Photonic band gap,Conferences,Energy efficiency,Photonics
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