GaN-Based Resonant-Cavity Light-Emitting Diodes Grown on Si

GaN-on-Si resonant-cavity light-emitting diodes (RCLEDs) have been successfully fabricated through wafer bonding and Si substrate removal. By combining the chemical mechanical polishing technique, we obtained a roughness of about 0.24 nm for a scan area of 5 mu m x 5 mu m. The double-sided dielectric distributed Bragg reflectors could form a high-quality optical resonant cavity, and the cavity modes exhibited a linewidth of 1 nm at the peak wavelength of around 405 nm, corresponding to a quality factor of 405. High data transmission in free space with an opening in the eye diagram was exhibited at 150 Mbps, which is limited by the detection system. These results showed that GaN-based RCLEDs grown on Si are promising as a low-cost emitter for visible light communications in future.