Simulation of serial RRAM cell based on a Verilog-A compact model

Model-based simulation is one of the effective methods of scientific research. The inherent variability of resistive switching mechanisms has been an obstacle for the massive commercial implementation of the resistive random access memory (RRAM) devices. In this work, we simulated the resistive switching behavior based on an existing RRAM Verilog-A model, in which the simulated switching parameter...