Theoretical Investigation for Growth of High Quality GaN on Epitaxial Graphene

Maruf Ahsan Rifat, Md. Sharifuzzman Shakil,Ashraful Ghani Bhuiyan,Akihiro Hashimoto

2021 5th International Conference on Electrical Engineering and Information & Communication Technology (ICEEICT)（2021）

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摘要

GaN is one of the most important semiconductors with highly attractive properties. Efforts have been made for decades to grow high-quality GaN crystals, however, the quality is not good as Si crystal. This paper reports the theoretical possibilities of growing high-quality GaN on epitaxial graphene (EG). According to our findings, growing GaN on EG is really promising due to their hexagonal symmet...

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关键词

Compressive stress,Graphene,Discrete Fourier transforms,Lattices,Crystals,Silicon,Communications technology

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