A Symmetric Multilayer GeSe/GeSeSbTe Ovonic Threshold Switching Selector with Improved Endurance and Stability

2021 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)(2021)

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摘要
Ovonic threshold switching (OTS) selector is becoming the most suitable candidate for selector devices in memristor crossbar array, owing to its high selectivity and fast response time. However, device endurance and variance are persistent tricky problems for application. In this article, a novel symmetric multilayer OTS selector based on simple GeSe and SbTe-doped GeSe was investigated. The resul...
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关键词
Performance evaluation,Fluctuations,Memristors,Switches,Nonhomogeneous media,Threshold voltage,Circuit stability
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