Reference Voltage Generator for 80V GaN HEMT Gate Driver

2021 6th International Conference on Integrated Circuits and Microsystems (ICICM)(2021)

Cited 1|Views2
No score
Abstract
Based on 0.18μm 80V BCD process, a reference voltage generator for GaN HEMT gate driver without high voltage low dropout regulator is designed, which is mainly composed of high-voltage bandgap reference and operational transconductance amplifier. It can achieve a low temperature coefficient with a wide supply voltage range from 5V to 80V in the temperature range from $-25^{\circ}\mathrm{C}$ to $10...
More
Translated text
Key words
Temperature measurement,Temperature distribution,Voltage measurement,Simulation,HEMTs,Gate drivers,Generators
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined