氮退火对SiC MOSFET栅源电压漂移的影响
Semiconductor Technology（2021）
Abstract
为了准确地表征4H-SiC MOSFET经过高温栅偏(HTGB)测试后的栅源电压漂移,优化氮退火工艺条件以改善MOSFET栅源电压的稳定性,在n型4H-SiC (0001)外延片上制备了横向扩散MOSFET (LDMOSFET)和纵向扩散MOSFET (VDMOSFET).对栅氧化层采用不同温度、时间和气氛进行氮退火,并对制备的MOSFET进行了HTGB测试,探讨了栅压应力大小、应力时间、温度对栅源电压漂移的影响.结果 表明:相比LDMOSFET,VDMOSFET可以更有效地表征栅源电压漂移趋势;氮退火对栅源电压正向漂移影响较小;NO退火后增加高温N2退火、提高NO退火的温度和增加NO退火的时间均会引起VDMOSFET栅源电压负向漂移量增加;当栅压应力为-16 V、应力时间为500 s时,1200℃、70 min NO退火的VDMOSFET的栅源电压漂移比1250℃、40 min NO退火的小0.1～0.3 V.
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