105× Endurance Improvement of FE-HZO by an Innovative Rejuvenation Method for 1z Node NV-DRAM Applications

High operating voltage and low endurance are obstacles for FE HZO to be a viable candidate for NV-DRAM technology. In this work, we provide a breakthrough solution for HZO towards 1z node NV-DRAM application. Firstly, the endurance failure mechanism of HZO film under low-electric field (<1.5MV/cm) is systematically investigated by electrical characterizations, DFT calculations and STEM-ABF technique. It is found that fatigue under low-electric field is relevant to the electron de-trapping rather than defect generation. Furthermore, based on the new insight on the failure mechanism, a novel rejuvenation method is proposed. Five orders of endurance enhancement can be achieved. The excellent properties including low operating voltage (1.1V), non-volatile and fairly high endurance (>1014) are quite promising towards 1z node NV-DRAM applications.