Calculation of Electrical Parameters of The Ag/SnO 2 /n InP/In Schottky Diode

Tin oxide (SnO2) belongs to the II VI semiconductor family with a wide band gap of 3.5 eV. It has been revealed that SnO2 is n-type direct band semiconductor. In this study, we have investigated the electrical characteristics of Ag/SnO2/n-InP/In Schottky diode by using current – voltage (I–V) and capacitance voltage (C–V) techniques at room temperature. Initially, the ohmic contact has been made on n InP semiconductor with In metal. After this process the Tin oxide (SnO2) interface layer was grown with dc magnetic sputter technique on the n InP semiconductor substrate, and then the contact area is determined by sputtered Ag metal to surface of InP in DC sputtering system at about 10 Torr. The I–V and C–V measurements of diode performed by the use of a KEITLEY 487 Picoammeter/ Voltage Source and HP 4192A (50–13 MHz) LF Impedance Analyzer at room temperature and in dark, respectively. The electrical parameters of this diode such as ideality factor and the barrier height values are calculated from I-V measurements and the carrier concentration, Fermi energy and the diffusion potential and barrier height values were extracted from reverse bias C–V measurements at various frequencies and room temperature by using thermionic emission theory.