Mobility Calculation for Nanoscale Multi-Gate FETs with Arbitrary Two-Dimensional Cross Section with a Homogeneous Channel Including Strain Effects

A mobility calculator for nanoscale multi-gate FETs with arbitrary two-dimensional (2D) cross section is described. It solves the coupled system of the 2D Schröedinger equation and the Poisson equation, therefore, the carrier quantization within the 2D cross section can be naturally considered. The strain effect is included by modifying the Hamiltonian. Both the conduction band and the valence band are implemented. The KuboGreenwood expression in the one-dimensional (1D) momentum space is used to calculate the mobility. Examples for a nanowire transistor and two FinFETs are presented. The interaction between the mobility calculator and the device simulator is described. Keywords-Mobility calculator;FinFET;Strain effect;