Scanning tunneling microscopy , high-resolution electron energy loss spectroscopy , and theoretical studies of trimethylphosphine ( TMP ) on a Si ( I lD-Q x 7 ) surface

ffi19-ffi289915 see front matter @ 1999 Elsevier Science B.V. All rights reserved. PI I : S0039-6028 ( 99 \ 00982-6 scale structures and atomically controlled devices (such as quantum dots and wires, superlattices, etc.) have been developed using metalorganic chemical vapor deposition (MOCVD) and chemical beam epitaxy (CBE). The first step in the fabrication of the structures and devices is adsorption and decomposition of metalorganic compounds as precursors in MOCVD and CBE. From the above point of view, many studies of the adsorption and decomposition of the precursors Scanning tunneling microscopy, high-resolution electron energy loss spectroscopy, and theoretical studies of trimethylphosphine (TMP) on a Si( I lD-Q x7) surface