A 3-nm Gate-All-Around SRAM Featuring an Adaptive Dual-Bitline and an Adaptive Cell-Power Assist Circuit

Taejoong Song,Hoonki Kim,Woojin Rim,Hakchul Jung,Changnam Park,Inhak Lee,Sanghoon Baek,Jonghoon Jung

IEEE Journal of Solid-State Circuits（2022）

引用 7|浏览9

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摘要

A 256-Mb gate-all-around (GAA) 6T SRAM is implemented in Samsung 3GAE EUV technology. Adaptive dual-bitline (ADBL) and adaptive cell-power (ACP) SRAM assist schemes are proposed to reduce SRAM $V_{\mathrm {MIN}}$ . ADBL reduces the effective bitline (BL) resistance up to 62% by connecting auxiliary bitline (AUXBL) of small res...

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关键词

Gallium arsenide,Random access memory,Transistors,FinFETs,Resistance,Capacitance,Latches

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