Response of Integrated Silicon Microwave pin Diodes to X-Ray and Fast-Neutron Irradiation

Jeffrey W. Teng,Delgermaa Nergui,Hari Parameswaran,Nelson E. Sepúlveda-Ramos,George N. Tzintzarov,Yaw Mensah,Clifford D. Cheon,Sunil G. Rao,Brett Ringel,Mariia Gorchichko,Kan Li,Hanbin Ying,Adrian Ildefonso,Nathaniel A. Dodds,R. Nathan Nowlin,En Xia Zhang,Daniel M. Fleetwood,John D. Cressler

IEEE Transactions on Nuclear Science（2022）

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Abstract

Integrated silicon microwave pin diodes are exposed to 10-keV X-rays up to a dose of 2 Mrad(SiO ₂ ) and 14-MeV fast neutrons up to a fluence of

$2.2\,\,\boldsymbol {\times }\,\,10\,\,^{\mathrm{ 13}}$

cm ⁻² . Changes in both dc leakage current and small-signal circuit components are examined. Degradation in performance due to total-ionizing dose (TID) is shown to be suppressed by non-quasi-static (NQS) effects during radio frequency (RF) operation. Tolerance to displacement damage from fast neutrons is also observed, which is explained using technology computer-aided design (TCAD) simulations. Overall, the characterized pin diodes are tolerant to cumulative radiation at levels consistent with space applications such as geosynchronous weather satellites.

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Key words

Displacement damage,fast neutron,pin diode,radiation,SiGe BiCMOS,silicon,technology computer-aided design (TCAD),total ionizing dose (TID),X-ray

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