Advanced BEOL Interconnects
2020 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE (IITC)(2020)
Abstract
Feasibility of single damascene Cu BEOL nanowires with TaN/Ta barrier (Le. omitting a CVD-Co liner) was studied. Successful Cu gap-fill in 36 nm pitch trenches demonstrated 30% line resistance (Line-R) reduction vs. leading-edge Cu with conventional TaN/Co liner. This was attributed to larger Cu volume fraction and 15% lower intrinsic Cu resistivity. In order to assess the Line-R crossover point, comparable Ru nanowires were estimated through analysis of electron scattering components, based on Rs of blanket Ru films. The calculation predicts Line-R of subtractive-etched Ru lines (larger grains) crosses conventional Cu with TaN/Co liner at 12 nm linewidth, but never crosses Cu with TaN/Ta liner. Analysis of electron scattering components shows the resistivity of Ru lines will be dominated by grain boundary scattering, suggesting that the key for subtractive-etched Ru wires crossing over Cu would be innovations that enhance grain growth of blanket Ru films.
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Key words
advanced BEOL interconnects,CVD-Co liner,line resistance reduction,volume fraction,Line-R crossover point,electron scattering components,blanket films,grain boundary scattering,leading-edge copper,pitch trenches,subtractive-etched ruthenium wires,subtractive-etched ruthenium lines,grain growth,single damascene copper BEOL nanowires,Cu,TaN-Ta,Ru
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