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Advanced BEOL Interconnects

Takeshi Nogami,Oleg Gluschenkov,Yasir Sulehria,Son Nguyen,Huai Huang,Nick A. Lanzillo,Anuja DeSilva,Yann Mignot,Jennifer Church,Joe Lee,Prasad Bhosale,Raghuveer Patlolla,Devika Sil,Hosadurga Shobha,James Kelly,Juntao Li,James Demarest,Andrew Simon,Lawrence Clevenger, Brown Peethala Dan Edelstein,Bala Haran

2020 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE (IITC)（2020）

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Abstract
Feasibility of single damascene Cu BEOL nanowires with TaN/Ta barrier (Le. omitting a CVD-Co liner) was studied. Successful Cu gap-fill in 36 nm pitch trenches demonstrated 30% line resistance (Line-R) reduction vs. leading-edge Cu with conventional TaN/Co liner. This was attributed to larger Cu volume fraction and 15% lower intrinsic Cu resistivity. In order to assess the Line-R crossover point, comparable Ru nanowires were estimated through analysis of electron scattering components, based on Rs of blanket Ru films. The calculation predicts Line-R of subtractive-etched Ru lines (larger grains) crosses conventional Cu with TaN/Co liner at 12 nm linewidth, but never crosses Cu with TaN/Ta liner. Analysis of electron scattering components shows the resistivity of Ru lines will be dominated by grain boundary scattering, suggesting that the key for subtractive-etched Ru wires crossing over Cu would be innovations that enhance grain growth of blanket Ru films.
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Key words
advanced BEOL interconnects,CVD-Co liner,line resistance reduction,volume fraction,Line-R crossover point,electron scattering components,blanket films,grain boundary scattering,leading-edge copper,pitch trenches,subtractive-etched ruthenium wires,subtractive-etched ruthenium lines,grain growth,single damascene copper BEOL nanowires,Cu,TaN-Ta,Ru
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