Strong bulk-surface interaction controlled in-plane anisotropy of electronic structure in GaTe

anisotropy of electronic structure in GaTe Kang Lai1, Sailong Ju1, Hongen Zhu2, Bingjie Yang3, Enrui Zhang1, Ming Yang1, Fangsen Li3, Shengtao Cui2, Xiaohui Deng4, Zheng Han5,6*, Mengjian Zhu7*, Jiayu Dai1* 1Department of Physics, National University of Defense Technology, Changsha 410073, China 2National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China 3School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, 230026, China 4College of Physics and Electronic Engineering, Hengyang Normal University, Hengyang 421002, China 5State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics, Shanxi University, Taiyuan 030006, China 6Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China 7College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China