Study of Atomic Layer Deposition of Hafnium Oxide as an Insulation Layer on Cu for Potential Flip Chip Integration
2021 IEEE CPMT Symposium Japan (ICSJ)（2021）
Abstract
Ultra thin films of hafnium oxide were deposited on copper using Atomic Layer Deposition. The physical insulation provided by the film was tested using Neutral Salt Spray testing. We examine the role of the thin film in preventing the oxidation of Cu.
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Key words
Insulation,Temperature,Atomic layer deposition,Hafnium oxide,Oxidation,Flip-chip devices,Three-dimensional integrated circuits
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