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TCAD Simulation Study of Source and Gate Material-Engineered Double Gate Tunnel Field Effect Transistor

G H Nayana,Sanjeev Sharma

2021 IEEE 3rd PhD Colloquium on Ethically Driven Innovation and Technology for Society (PhD EDITS)（2021）

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Abstract
The paper aims at analyzing the performance of device parameters of Double-Gate Tunnel Field-Effect Transistor (DG TFET) by availing material engineering to source and gate region. Using non-local tunneling model, simulations are accomplished using Technology Computer Aided Design (TCAD). Comparative analysis of Silicon Double gate TFET(Si DG TFET)and Germanium material as source Double-gate TFET(...
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Key words
Silicon compounds,Technological innovation,TFETs,Computational modeling,Voltage,Logic gates,Tunneling
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