PERC Solar Cells on p -Type Cz-Si Utilizing Phosphorus-Doped SiN X Layers
IEEE Journal of Photovoltaics（2022）
Abstract
We apply phosphorus-doped silicon nitride (SiNX:P) layers on the front surface of p-type Czochralski-grown silicon (Cz-Si) passivated emitter and rear cells (PERC). The layers are formed using industrial-type plasma-enhanced chemical vapor deposition. They provide excellent surface passivation with implied open-circuit voltages More
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Key words
Silicon compounds,Surface emitting lasers,Doping,Passivation,Photovoltaic cells,Lasers,Measurement by laser beam
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