Dynamic and Capacitive Characterization of 3D GaN n-p-n Vertical Fin-FETs

Thomas Bordignon,Manuel Fregolent,Carlo De Santi,Klaas Strempel,Andrey Bakin,Andreas Waag,Gaudenzio Meneghesso,Enrico Zanoni,Matteo Meneghini

2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)（2021）

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摘要

Gallium Nitride (GaN) vertical n-p-n 3D nanostructured transistors have been demonstrated to be excellent normally OFF devices, making them exploitable for next generation power converters. However, their stability is still under investigation.The aim of this work is to present one of the first studies on the performance and stability of n-p-n vertical FinFETs, to contribute to the understanding o...

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关键词

Temperature measurement,Performance evaluation,Semiconductor device measurement,Three-dimensional displays,FinFETs,Stability analysis,Threshold voltage

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