650V/780A GaN Power HEMT Enabling 10kW-Class High-efficiency Power Conversion

C.J. Neufeld,Y.-F. Wu,S. Wienecke, R.P. Smith,Y. Huang,M. Kamiyama, J. Ikeda,T. Hosoda, B. Swenson, R. Birkhahn

2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)（2021）

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摘要

This paper reports about 10kW-class 650V-rated GaN switches. GaN-on-Si HEMTs with maximum current of 780A and 33.2mm2 die area were fabricated by chip scaling and intrinsic device shrink which gave improved RON* A area Figure of merit. Tight integration with a low-voltage Si MOSFET results in a cascode switch with a high threshold of 4V, stable dynamic on-resistanc...

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关键词

Performance evaluation,MOSFET,Low voltage,Silicon carbide,Switches,HEMTs,Logic gates

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