Critical Design Considerations for Static and Dynamic Performances on 6.5 kV 4H-SiC MOSFETs Fabricated in a 6-inch SiC Foundry

Nick Yun,Justin Lynch,Skylar DeBoer,Adam J Morgan,Woongje Sung,Diang Xing,Minseok Kang,Anant Agarwal,Victor Veliadis,Voshadhi Amarasinghe,John Ransom

2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)（2021）

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摘要

6.5 kV-rated 4H-SiC MOSFETs have been successfully fabricated and demonstrated on 60 μm-thick, 1.2×1015 cm-3 doped N-type epi-layer on 6-inch, 4H-SiC N+ substrates. Devices were fabricated at the 6-inch SiC foundry, X-FAB, TX, USA. Active and edge termination areas of high voltage (>3.3 kV) SiC devices require critical design consideration due to implant straggles from the...

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关键词

Performance evaluation,MOSFET,Silicon carbide,Photonic band gap,High-voltage techniques,Doping,Foundries

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