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Demonstration of Cell-to-Cell Integrated 4H-SiC Lateral Bi-Directional Junction Field Effect Transistor (LBiDJFET)

2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)(2021)

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摘要
This paper reports the experimental results of the fabricated 4H-SiC Lateral Junction Field Effect Transistor (LJFET) and cell-to-cell integrated Lateral Bi-directional JFET (LBiDJFET). It was found that the reverse conduction characteristics of SiC LJFET were better than the forward conduction characteristics in terms of on-state resistance. The conduction mechanism of LBiDJFET can be described b...
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关键词
Resistance,Silicon carbide,Photonic band gap,Conferences,Bidirectional control,Voltage,JFETs
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