A Body-Biasing Technique for Single-Event Transient Mitigation in 28-nm Bulk CMOS Process

Jingtian Liu,Bin Liang,Yang Guo,Jianjun Chen,Yaqing Chi,Qian Sun,Shengyu Song,Hengzhou Yuan

IEEE Transactions on Nuclear Science（2021）

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摘要

Single-event transient (SET) glitches can be modified by body-biasing controlling techniques. In this article, a body-biasing configuration is proposed in combinational circuits, which plays no role during devices’ normal operation, but significantly mitigates SET disturbance as ion strike happens. NOR cell chains and NAND cell chains serve as cases to investigate the impact of the proposed config...

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关键词

Electric potential,Integrated circuit modeling,Transistors,MOS devices,Ions,Numerical models,Semiconductor process modeling

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