Advanced SiGe:C HBTs at Cryogenic Temperatures and Their Compact Modeling With Temperature Scaling

Xiaodi Jin,Markus Müller,Paulius Sakalas,Anindya Mukherjee,Yaxin Zhang,Michael Schröter

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits（2021）

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摘要

The dc and ac performance of advanced SiGe:C heterojunction bipolar transistors (HBTs) featuring transit frequency ( $f_{\text {T}}$ ) and maximum oscillation frequency ( $f_{\text {max}}$ ) of 300 and 500 GHz was characterized from 298 K down to 4.3 K. At 4...

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关键词

Temperature distribution,Integrated circuit modeling,Computational modeling,Tunneling,Temperature dependence,Silicon germanium,Voltage measurement

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