Characterizing Ferroelectric Properties of Hf 0.5 Zr 0.5 O 2 From Deep-Cryogenic Temperature (4 K) to 400 K

Jae Hur,Yuan-Chun Luo,Zheng Wang,Sarah Lombardo,Asif Islam Khan,Shimeng Yu

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits（2021）

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摘要

Ferroelectric Hf0.5Zr0.5O2 (HZO) thin film has obtained considerable attention for emerging non-volatile memory (eNVM) and synaptic device applications. To our best knowledge, the polarization switching of HZO has not been comprehensively investigated in wide-ranging temperatures from deep-cryogenic 4 K to elevated temperature 400 K within the same set of test stru...

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关键词

Capacitors,Fatigue,Tin,Plasma temperature,Electrodes,Random access memory,Nonvolatile memory

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