Cryogenic Operation of 3-D Flash Memory for Storage Performance Improvement and Bit Cost Scaling
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits（2021）
Abstract
This report introduces the cryogenic operation and storage performance of 3-D flash memory. The cell transistor characteristics and the basic functionalities, including read and program and erase (P/E) operations, are investigated at an extremely low temperature of 77 K cooled by the liquid nitrogen. The cell transistor has a steep subthreshold slope at 77 K compared with at 300 K, and the read op...
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Key words
Transistors,Flash memories,Three-dimensional displays,Temperature distribution,Temperature sensors,Performance evaluation,Costs
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