Improvement on Ge/GeO x /Tm 2 O 3 /HfO 2 Gate Performance by Forming Gas Anneal

Laura Žurauskaitė,Mikael Östling,Per-Erik Hellström

ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC)（2021）

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摘要

The improvement of forming gas anneal (10 % H2in N2) at 400°C on electrical properties of Ge/GeOx/Tm2O3/HfO2 gate stacks is investigated. It is found that forming gas anneal effectively suppresses fixed charge density, oxide trap density and interface state density. Hydrogen is demonstrated to efficiently passivate the negative fixe...

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关键词

Annealing,Conferences,Hydrogen,Europe,Voltage,Logic gates,Hafnium compounds

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