Enhanced Data Integrity of In-Ga-Zn-Oxide Based Capacitor-less 2T Memory for DRAM Applications
ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC)（2021）
Key words
IGZO,Capacitor-less,2T0C,gain-cell,noise immunity,parasitic cell capacitance,VPC-RBL,HVPC-RBL
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