Enhanced data integrity of In-Ga-Zn-Oxide based Capacitor-less 2T memory for DRAM applications

IGZO (InGaZnO)-DRAM has been increasingly explored as an alternative to traditional DRAM due to its reduced transistor leakage (∼10−18A) and related minimal storage node capacitance in addition to ease of integration (entirely BEOL). The 2TOC IGZO-DRAM bit-cell configuration has additional benefits from a scaling point of view due to the potential for monolithic 3D stacking. We present ...