Vertical and lateral charge losses during short time retention in 3-D NAND flash memory

Yongwoo Lee,Jinsu Yoon, Kwangmin Lim,Bongsik Choi,Geon-Hwi Park,Ju Won Jeon,Jong-Ho Bae,Dong Myong Kim,Dae Hwan Kim,Eunmee Kwon,Sung-Jin Choi

ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC)（2021）

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摘要

A fast charge loss during short time retention operation was observed in word-line stacked 3-D NAND flash memory, and the origin of the fast charge loss was comprehensively evaluated. Using a fast-response pulse I-V system, the fast charge loss behaviors from lateral and vertical migration of trapped charges were thoroughly investigated and measured at various program/erase levels and temperatures...

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关键词

Temperature measurement,Pulse measurements,Conferences,Europe,Programming,Solids,Loss measurement

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