Spontaneous anomalous Hall effect arising from antiparallel magnetic order in a semiconductor

Recently, a distinct mechanism of spontaneous anomalous Hall effect, the so-called crystal anomalous Hall effect, was predicted to arise from antiparallel magnetic moments surrounded by cages of nonmagnetic atoms [\v{S}mejkal et al., Sci. Adv.6, eaaz8809(2020)]. Here, we observe this spontaneous anomalous Hall effect in thin films of semiconducting MnTe with well-established room-temperature collinear antiparallel ordering. We show that this Hall signal is consistent with the measured experimental magnetic easy axis and with the calculated unconventional time-reversal symmetry broken band structure.