AlGaN/GaN HEMTs with electric field modulation effect - a comprehensive study.

In order to optimize the electric field distribution and the corresponding thermal field distribution, electric field modulation effect is applied. A new structure with a partial GaN cap layer(PCL-HEMTs) was proposed. Then, a two-dimensional analytical model for the channel potential and electric field distributions of PCL-HEMTs were developed. Also, the sample of PCL-HEMTs have been successfully manufactured. The room-temperature and high-temperature DC characteristics have been performed. The test results indicate that the breakdown voltage was enhanced and the output saturation current was also increased. Likewise, the degradation of the high-temperature output saturation current was alleviated to some extent, due to the improved thermal field distribution. This comprehensive study of PCL-HEMTs will provide a guideline for other high-voltage GaN-based devices.