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High Performance Predictable Quantum Efficient Detector Based on Induced-Junction Photodiodes Passivated with SiO2/SiNx

Italian National Conference on Sensors(2021)

Cited 8|Views19
Key words
silicon photodetector,inversion layer photodiode,induced-junction,surface passivation,PECVD silicon nitride,radiometry,optical power,primary standard,predictable quantum efficiency
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