Understanding the Initial Stages of Time Dependent Dielectric Breakdown in Si/SiO 2 MOSFETs Utilizing EDMR and NZFMR

Fedor V. Sharov,Stephen. J. Moxim,Patrick M. Lenahan,David R. Hughart,Gaddi S. Haase,Colin. G. McKay

2021 IEEE International Integrated Reliability Workshop (IIRW)（2021）

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摘要

We investigate the initial stages of time-dependent dielectric breakdown (TDDB) in high-field stressed Si/SiO2 MOSFETs via electrically detected magnetic resonance (EDMR). As anticipated, we find that the defects dominating the initial stages of TDDB include silicon dangling bonds at the (100) Si/SiO2 interface (Pb0 and Pb1 centers). We find that the den...

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关键词

silicon dioxide,electrical stressing,TDDB,EDMR,NZFMR,SILC,interface traps,MOSFET

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