Channel Length Dependence of PBTI in High-k First RMG Gate Stack Integration Scheme

Narendra Parihar,Goutham Arutchelvan,Jacopo Franco,Sylvain Baudot, Ann Opedebeeck,Steven Demuynck,Hiroaki Arimura,Lars-Åke Ragnarsson,Jerome Mitard,Vincent De Heyn,Abdelkarim Mercha

2021 IEEE International Integrated Reliability Workshop (IIRW)（2021）

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摘要

The impact of channel length (LG) scaling on the PBTI is studied on High-k First (HKF) Replacement Metal Gate (RMG) planar devices. The threshold voltage shift (ΔVT) due to PBTI is measured for long to short devices for different halo dose implants. It is shown that for a constant overdrive voltage (VOV), the ΔVT due to PBTI decreases as LG sc...

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关键词

MOSFET,Voltage measurement,Density measurement,Metals,Implants,Logic gates,Threshold voltage

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