Invited: Polarization engineering in GaN-based normally-off transistors

Proposal and processing aspects of the proof-of-concept InGaN/AlGaN metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) with etched gate recess and access regions are addressed. Large negative polarization charge in the MOS gate stack provides the HEMT normally-off operation, while free electrons are populated at access regions after the etching. Self-aligned approach was used f...