Compact Stacked Rugged GaN Low-Noise Amplifier MMIC

Rugged GaN HEMT LNAs are well established components for high-performance microwave receivers. In a previous work, we introduced the concept of a stacked circuit topology, which allows for a power handling capability exceeding conventional GaN HEMT designs. In this paper, we present an improved design of a stacked GaN LNA MMIC, showing that the concept is capable of providing competitive noise figures while minimizing the requirement for additional chip area.