Minimization of Commutation Losses in LLC Resonant Converter with GaN HEMTs and Si based MOSFETs

Highly efficient and high-power density power electronics applications require semiconductor devices with minimized power losses. Traditional Si based MOSFET transistors are limited by maximum operating frequency unlike GaN transistors. The combination of high critical breakdown field and high electron velocity and mobility in the GaN material system provided a path to highly efficient end compact...