A Bulk Full-Gate SOI-LDMOS Device With Bulk Channel and Electron Accumulation Effect

Weizhong Chen,Haifeng Qin,Yuanxi Huang,Yi Huang,Zhengsheng Han

IEEE Transactions on Electron Devices（2021）

引用 3|浏览5

暂无评分

摘要

A novel LDMOS featuring bulk full gate (BFG) with bulk channel and electron accumulation effect, named BFG-LDMOS, is proposed and investigated. The BFG includes bulk gate oxide (BGO) that is inserted in the ${N}$ -drift and the full gate (FG) that is formed by the wide open base transistor (P-body/ 更多

查看译文

关键词

Logic gates,Junctions,Transistors,Electric potential,Doping,Silicon-on-insulator,Resistance

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要