A Bulk Full-Gate SOI-LDMOS Device With Bulk Channel and Electron Accumulation Effect
IEEE Transactions on Electron Devices(2021)
摘要
A novel LDMOS featuring bulk full gate (BFG) with bulk channel and electron accumulation effect, named BFG-LDMOS, is proposed and investigated. The BFG includes bulk gate oxide (BGO) that is inserted in the ${N}$ -drift and the full gate (FG) that is formed by the wide open base transistor (P-body/ 更多
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关键词
Logic gates,Junctions,Transistors,Electric potential,Doping,Silicon-on-insulator,Resistance
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