Enhancing the Sensitivity of GaN High Electron-Mobility Transistors-Based pH Sensor by Dual Function of Monolithic Integrated Planar Multi-Channel and Ultraviolet Light

IEEE Transactions on Electron Devices(2021)

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摘要
In order to realize high-sensitivity real-time monitoring of acid–base neutral solutions in the industrial field, it is very important to study how to improve the sensitivity of a pH sensor. Herein, the sensitivity of the pH sensor was improved by using both monolithic integrated planar multi-channel and photoconductive properties of gallium nitride (GaN) high electron-mobility transistors (HEMTs)...
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关键词
HEMTs,MODFETs,Sensitivity,Gallium nitride,Wide band gap semiconductors,Epitaxial growth,Aluminum gallium nitride
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