Normally-OFF Diamond Reverse Blocking MESFET

J. Cañas,A. C. Pakpour-Tabrizi, T. Trajkovic,F. Udrea,D. Eon,E. Gheeraert,R. B. Jackman

IEEE Transactions on Electron Devices（2021）

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摘要

Schottky contacts have been used to fabricate normally- OFF lateral reverse-blocking MESFETs on p-type (boron-doped) O-terminated monocrystalline diamond. The devices utilized an ohmic source contact but both gate and drain contacts were Schottky in nature. Boron-doped p-channel diamond MESFETs reported to date display the less attractive normally- ON characteristics. Here, the normally- OFF trans...

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关键词

Logic gates,Diamond,Substrates,MESFETs,Doping,Schottky barriers,Molybdenum

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